Impact of discrete trapping in high pressure deuterium annealed and doped poly-Si channel 3D NAND macaroni

In this paper, the influence of different processes on electron trapping in vertical 3D NAND macaroni has been investigated. Through slow Id-Vg measurements and RTN analysis, it is shown that doping can cure poly-Si channel defects while deuterium (D2) anneal can passivate both traps present in the channel and in the ONO gate stack. Finally, it is shown that the D2 anneal can also help to improve the retention after cycling.