Multiple Trench Split-gate SOI LDMOS Integrated With Schottky Rectifier

In this paper, a multiple trench split-gate silicon-on-insulator (SOI) lateral double-diffused MOSFET with a Schottky rectifier (MTS-SG-LDMOS) is proposed and its characteristics are studied using 2-D simulations. The new structure features double oxide trenches, a floating polysilicon split-gate, and a Schottky rectifier. Each oxide trench includes a vertical field plate which enhances the depletion of the drift region and modulates the bulk electric field. As the simulation results, when compared to the conventional SOI LDMOS (C-LDMOS), the breakdown voltage in the MTS-SG-LDMOS increasesfrom 297 to 350V, the specific on-state resistance (R
_ON,sp
) decreases from 142.9 to 48.2 m · cm
²
, and the gate-drain charge (Qgd) decreases from 19 to 9 pC. Moreover, the reverse recovery time of the proposed structure shows a 73.6% reduction as compared to the C-LDMOS device.