A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration

A novel high-voltage single-emitter horizontal current bipolar transistor (HCBT) is presented. Breakdown voltage improvement compared to high-speed transistor is obtained with full depletion of the intrinsic collector by using implanted CMOS p-well region. Transistors with BV
_CEO
= 10.5 V and f
_T
= 15.8 GHz are demonstrated. Higher operating currents can be easily obtained by stretching the emitter length resulting in a flexible physical design of circuits. The transistor is fabricated in 0.18-μm HCBT BiCMOS process flow without the additional process steps and the use of additional lithography masks.