Protection and temperature-dependent switching characterization of latest generation 10 kV SiC MOSFETs

Silicon Carbine (SiC) based power semiconductor devices have increased voltage blocking capability, in the meantime, satisfactory switching performance as compared to conventional Silicon (Si) devices. This paper focuses on the latest generation 10 kV / 20 A SiC MOSFETs and investigates their protection schemes and temperature-dependent switching characteristics. A high voltage double pulse test platform is constructed including solid state circuit breaker, gate drive and hot plate under device under test (DPT) for temperature-dependent characterization. A behavioral model is established to analytically investigate switching performance of 10 kV SiC MOSFETs, and the temperature-dependent factors are studied in detail. The experimental results under various load currents and gate resistances from 25 C to 125 C at 7 kV dc-link voltage are presented.