High temperature grown graphene on SiC studied by Raman and FTIR spectroscopy

Epitaxial graphene on semi-insulating silicon carbide was grown using a high temperature method at atmospheric pressure in argon atmosphere. The temperature dependence of the layer quality was analysed using Raman and infrared spectroscopy. It is demonstrated that infrared spectroscopy can be used as a versatile tool to access the layer count and the quality of the epitaxial grown graphene on silicon carbide. The results obtained by infrared spectroscopy correlate with the Raman measurements.