SiC Schottky diode rectifier bridge represented as diffusion-welded stack

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. We considered the prototype of a SiC Schottky diode Rectifier Bridge made on the basis of commercial SiC Schottky diodes by diffusion welding (DW). Vertical integration for four diode chips in combination with molybdenum electrodes can improve the overall weight and dimensions of the module performance and increase device durability to radiation exposure. Our DW prototype, in contrast to commercial bridges, completely preserved the initial characteristics after irradiation by electrons with an energy of 0.9 MeV and density of 3 × 10
¹⁶
cm
⁻²
.