Performance evaluation and expected challenges of silicon carbide power MOSFETs for high voltage applications

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. This paper presents an overview of the main technical requirements of high voltage Silicon Carbide MOSFETs rated above 3300V when compared to the well-established requirements of Silicon IGBTs and diodes. Combined with a performance evaluation of existing 3300 V SiC MOSFET prototypes from ROHM, the paper will discuss the benefits and challenges facing these devices for targeting mainstream and future topologies employed in high power applications such as those in grid systems, railway traction and industrial drives. The paper will also attempt to provide an outlook into potential development trends towards exploiting the full benefits of SiC MOSFETs.