Effect of 3C-SiC irradiation with 8 MeV protons

Effects of proton irradiation in n-3C-SiC grown by sublimation on a 4H-SiC substrate have been studied by the Hall effect and photoluminescence methods. It was found that the carrier removal rate (Vd) reaches a value of ~110 cm
^-1
. The full compensation of samples with an initial concentration of (1-2) × 10
¹⁸
cm
^-3
was estimated to occur at doses of about 6 x 1015 cm
^-2
. Compared with 4H and 6H silicon carbide, no significant increase in the intensity of so-called "defective" photoluminescence was observed in 3C-SiC.