Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. Comparative study of p-type 4H-SiC epitaxial layers grown simultaneously on two different 4H-SiC substrates, namely n-type and semi-insulating have been done by different structural, optical and electrical experimental techniques.