Detection of crystal defects in high doped epitaxial layers and substrates by photoluminescence

Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. In this work, the detection and characterization of various crystal defects in high doped silicon carbide by photoluminescence (PL) is explored. The detection of basal plane dislocations in high doped epitaxial buffer layers is demonstrated using the near ultraviolet (NUV) emission images. Several characteristic defects in high doped 150mm substrates like grain boundaries and screw dislocations are also detected and characterized using the NUV PL images. Further characterization using molten potassium hydroxide etching is presented.