Practical CMUT Fabrication With a Nitride-to-Oxide-Based Wafer Bonding Process

The introduction of wafer-bonding technique to capacitive micromachined ultrasonic transducer (CMUT) fabrication offered advantages over the surface micromachining technique, such as simplified fabrication, better membrane uniformity, and increased active area. The conventional wafer-bonding CMUT process employs silicon-on-insulator (SOI) wafers to produce the vibrating membrane layer. However, the use of SOI wafers can lead to poor membrane thickness uniformity despite the high cost. Furthermore, an additional local-oxidation (LOCOS) process should be used for SOI-based wafer bonding process to improve breakdown voltage and reduce parasitic capacitance. This paper reports a nitride-to-oxide bonding process for CMUT fabrication, designed to achieve similar results as the LOCOS-added process reported by Park et al., but without the need for SOIs and fabrication complexity. A fully functional CMUT designed for collapse-mode operation was fabricated and an immersion center frequency was measured to be 4.2 MHz with a 90% bandwidth.