Multistage infrared emitters based on InAsSb strained layers grown by metal-organic chemical vapor deposition

We report on the metal-organic chemical vapor deposition (MOCVD) of mid-infrared InAsSb multistage emitters using a high speed rotating disk reactor. The devices contain AlAsSb claddings and strained InAsSb active regions. These emitters have multistage, type I, InAsSb/InAsP quantum well active regions. A semi-metal GaAsSb/InAs layer acts as an internal electron source for the multistage injection lasers and AlAsSb is the electron confinement layer. These structures are the first MOCVD multistage devices. Broadband LED's produced 2 mW average power at 3.7 /spl mu/m and 80 K and 0.1 mW at 4.3 /spl mu/m and 300 K. A multistage, 3.8-3.9 /spl mu/m laser structure operated up to T=180 K. At 80 K, peak-power >110 mW/facet and a high slope-efficiency (48%) were observed in these gain guided lasers.