Effect of dielectric constant and oxide thickness on the performance analysis of symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region

In this paper, the potential distribution for symmetric double gate stack-oxide junctionless field effect transistor (DGS-JLFET) in subthreshold region has been observed. Using the potential distribution, current vs voltage (I
_ds
vs. V
_gs
) characteristic and various short channel effects such as on-off ratio (I
_on
/I
_off
), subthreshold swing (SS), drain induced barrier lowering (DIBL), threshold voltage roll-off (TVRO) have been studied by changing device parameters. It has been observed that, if the dielectric constant of high-k oxide is increased and the thickness of stack-oxide is decreased, device shows better short channel effect (SCE) performance in the most of the cases.