Dark current of the solid-state imagers at high temperature

The theoretical analysis of dark currents of area charge-coupled devices (CCD) and CMOS image sensor at high temperatures from 60 to 150 degrees Celsius is carried out. It is shown, that reduction of accumulation time reduces dark currents of photodiodes. Transfer registers dark currents is dominating component in area CCD and defined by temporary parameters of scan. In CMOS image sensor with global shutter the high level of dark current is caused by an element of memory in the pixel. This a component is defined by temporary parameters of scan and coordinates of elements. Thus, CMOS image sensor with the rolling shutter is an optimum choice in case of design of high-temperature Television cameras. Experimental studies are conducted. Theoretical data are confirmed.