Fin-Array Tunneling Trigger With Tunable Hysteresis on (001) Silicon Substrate

We report the fabrication and characterization of a GaAs fin-array tunneling trigger monolithically integrated on an exact (001) silicon substrate. A Schmitt-trigger-like behavior was observed under double sweep condition by connecting the tunnel diode with an on-chip load resistor. The tunneling trigger circuit was studied using load line analysis. Critical parameters of the circuit were extracted. We found that the circuit hysteresis can be tuned by tailoring of the diode dimensions and load resistor values.