Growth of Oxygen Precipitates and Dislocations in Czochralski Silicon

The impact of oxygen precipitates and dislocations on carrier recombination is investigated on thick silicon slabs cut vertically from a Czochralski-grown silicon ingot. Using a combination of photoluminescence imaging, photoluminescence spectroscopy, and Fourier transform infrared spectroscopy, we investigate the impact of pre-anneal on their recombination activity. We show that the vacancy concentration during precipitate growth affects the recombination activity of oxygen precipitates. Finally, we demonstrate the impact of nonequilibrium point defect concentrations on precipitate and dislocation growth.