UpTime® Si2H6/SiF4 Mix for High Productivity Si Implant

There is a need to improve the performance of Si+ implant dopant source for several emerging high dose low energy precision material modification implant applications. Beam current and source life obtained from SiF
₄
, the currently available dopant source is not able to meet either the beam current or the ion source life desired to enable the adoption of such applications. This paper presents a novel silicon dopant gas source based on mixture of Si
₂
H
₆
and SiF
₄
, which delivers 15% higher beam current for Si in comparison to SiF
₄
, thus enabling the process owners to implement these emerging Si implant applications. In addition this new dopant source mitigates halogen cycle effects associated with SiF
₄
, offers long ion source life and reduces beam glitching which is a critical requirement for these applications. Additionally, the benefit of the UpTime® sub-atmospheric system used in the delivery of dopant gas mixtures to the implanter and enhancing the safety of implant operation is highlighted.