Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status and challenges are reviewed. The specific topics of thermal and substrate effects, reliability, and HF measurements are also discussed.