Novel approach to reduce pull-in for RF MEMS capacitive shunt switches

The RF MEMS switches with low noise and high performance are the most prevalent and have shown superior Figures of Merit compared to their semiconductor counterparts, for communication applications. The only setback to these devices is their high actuation voltage which is not compatible with standard IC technology. The actuation voltage can be reduced by using low spring constant designs. This paper proposes RF MEMS shunt switches with novel top beam design which results in low actuation voltages. Two designs of capacitive shunt switches have been suggested here with a pull-in voltage to be less than 10V.