Gate oxide dependent performance of graphene FET using quasi-ballistic transport model

A quasi-ballistic transport model for graphene FET (GFET) is analyzed in this work. The effect of top and back gate oxide layers of the model with different dielectrics are considered to analyze the device performance. A comparative study considering the equivalent oxide thickness (EOT) for the different oxide layers is done using the proposed model. It is found by the simulation results that the use of high value dielectrics as oxide layers and equivalent oxide thickness improve the output drain current significantly.