A comparative analytical approach for gate leakage current optimization in silicon MOSFET: A step to more reliable electronic device

A comparative analytical approach for performance evaluation of direct tunneling gate leakage current of ultrathin silicon MOS device has been introduced. Direct tunnel characteristics in NMOSFET with different gate dielectric material (fifth, SiCh and AI2O3) at nanoscale regime has been analyzed. The variations of direct tunneling current with gate length, gate width, oxide thickness and various dielectric materials has been investigated in depth. Thus, scaling limit of gate dimension and choice of alternative gate dielectric for MOSFET is explored based on the direct tunnel characteristics for gate leakage current optimization.