Analysis of the electron-beam-induced reaction in the precursor thin films of ferroelectric SrBi/sub 2/Ta/sub 2/O/sub 9/

The electron-beam-induced reaction in the precursor thin films of ferroelectric SrBi/sub 2/Ta/sub 2/O/sub 9/ was investigated by infrared spectroscopy. Precursor solutions were prepared by mixing metal 2-ethylhexanoates. An electron beam was irradiated on the precursor thin films formed on Ag/SiO/sub 2//Si substrates. Total electron doses were adjusted ranging from 0 to 1.9/spl times/10/sup -3/ C/cm/sup 2/. As a result, it was found that the electron beam resolved -COO- in the metal 2-ethylhexanoates, and metal atoms lost hydrophobic groups and remained in the films as a form of hydroxide. It is a reason why precursor thin films are changed to be insoluble in organic solvents by electron beam irradiation. The SrBi/sub 2/Ta/sub 2/O/sub 9/ patterns fabricated by the electron-beam-induced process were very leaky though the thin films prepared using the same solutions exhibited good ferroelectric properties.