Influence of ion implantation on the ferroelectric properties of Pb(Zr,Ti)O/sub 3/ films

Pulsed laser deposition (PLD) was used to deposit Pb(Zr,Ti)O/sub 3/ (PZT) and (Pb,La)(Zr,Ti)O/sub 3/ (PLZT) thin films on YBa/sub 2/Cu/sub 3/O/sub 7-x/ (YBCO)//MgO and on technical substrates (high-grade steel Hastelloy). As a typical characterization of ferroelectric materials the P(E) hysteresis loop reflects the mobility of ferroelectric domain walls. We investigate the influence of ion implantation on the ferroelectric behaviour of thin PZT-films produced by PLD. The species of implanted ions (O/sup +/,Ca/sup +/) and the doses (10/sup 14/-10/sup 16/ cm/sup -2/, 180 keV) were varied to study the influence of the introduced atoms and defects on the ferroelectric properties. The films were investigated by XRD, RBS/Channeling and a RT-66A ferroelectric tester. The influence of thermal treatment of the implanted PZT-films on their ferroelectric properties will be discussed above the background of the induced structural defects and the implanted ions itself.