Enhancement of memory window in the metal/ferroelectric (YMnO/sub 3/)/insulator/semiconductor capacitor

We have investigated electrical properties of ferroelectric capacitors using Pt/YMnO/sub 3//Si and Pt/YMnO/sub 3//Y/sub 2/O/sub 3//Si structures. The YMnO/sub 3/ thin film has c-axis oriented hexagonal structure after annealing at 900/spl deg/C for 1 hr. C-V characteristics show that memory windows increase with the annealing temperature. Using Y/sub 2/O/sub 3/ films, we can reduce charge injection due to the electric field distribution between Y/sub 2/O/sub 3/ and SiO/sub 2/.