Computer simulation of polysilicon piezoresistive pressure sensors

In this paper, the computer simulation of polysilicon piezoresistive pressure sensors is introduced. The stress distribution on Si pressure sensitive membrane is analyzed by the finite-element method (FEM). The arrangement of polysilicon resistors, the geometrical size of the rectangular membrane and the temperature effect on the sensitivity of the sensors are considered. Among the eight possible patterns, the best one is pattern 8 for its highest output under the same pressure. It is also found that the sensitivity of the sensor will increase with the increase of the longitude/width ratio of the membrane. The simulation results can be used for optimizing the sensor design.