The study of growth and the properties of C in SiGeC alloy on Si by rapid thermal chemical vapor deposition

Thin heteroepitaxial films of Si/sub 1-x-y/Ge/sub x/C/sub y/ have been grown on Si[100] substrates by rapid thermal chemical vapor deposition (RTCVD) using C/sub 2/H/sub 4/ as C source. The composition and microstructure of Si/sub 1-x-y/Ge/sub x/C/sub y/ film were characterized by Auger Electron Spectroscopy (AES), Raman spectrum and Fourier transform infrared spectroscopy (FTIR). The results exhibit that lower temperature and higher SiH/sub 4//C/sub 2/H/sub 4/ flow ratio are helpful to form the substitutional C and improve the crystal quality. A possible mechanism for C incorporation in Si/sub 1-x-y/Ge/sub x/C/sub y/ layer grown by RTCVD using C/sub 2/H/sub 4/ is also proposed.