Gate dielectric strength dependent performance of CNT TFET: A tight binding study

This article presents a detail study of the performance of CNT TFET taking into account of different dielectric strength of gate oxide materials. Here we have investigated the transfer characteristics, on/off current ratio (Ion/Ioff), subthreshold slope of the device using Non Equilibrium Greens Function (NEGF) formalism in tight binding frameworks. The results are obtained by solving the NEGF and Poisson's equation self-consistently in NanoTCAD ViDES environment and found to have an interesting dependency of gate oxide dielectric strength over the performance of CNT TFET.