Technique and instrument for the characterization of deep traps in GaAs MESFET structures

The effective concentration of vacant deep traps in the buffer layer and substrate of a GaAs MESFET structure governs the overall effect of these traps on the MESFET performance. The onset of emptying of the deep traps at the layer-layer interfaces is responsible for the rising portion of the low-frequency capacitance-voltage characteristic. A low-frequency capacitance-voltage technique, which uses this effect for the determination of the effective concentration of vacant deep traps, is presented together with an instrument to realize it.