The control of pattern distortion and drift in epitaxial layer

The orientation deviation is the main factor influencing pattern distortion in epitaxial buried layers on p-type <100> silicon substrate. It is pointed out that better patterns can be obtained by deviating the orientation of the p-type <100> wafer 2/spl deg//spl sim/3/spl deg/ from the <100> axis toward the nearest <110> axis. This is somewhat different from the commonly adopted epitaxial growth condition.