Low-ohmic contacts by excimer laser annealing of implanted polysilicon

High power excimer laser annealing is used to activate dopants implanted in polysilicon layers. Sheet resistances as low os 50 /spl Omega///spl square/ are achieved for thin polysilicon layers on oxide, and low ohmic contacts have been produced to implanted junctions elevated by a polysilicon layer. The influence of the thickness of either the poly or the underlying oxide is evaluated.