CeO/sub 2/ buffer layers for YBCO: growth and processing via sol-gel technique

In this study, the processing and growth mechanisms of CeO/sub 2/ buffer layers were evaluated on Ni substrates for YBCO superconductor. The sol-gel technique was utilized to produce buffer layers from six different Ce based precursor materials. The microstructure, phase composition and formation of buffer layers were characterized by means of ESEM, SEM, EDS, XRD, pole figure XRD and DTA techniques. The results indicated that the CeO/sub 2/ formation starts at temperature of 420/spl deg/C. It was found that the best crack free CeO/sub 2/ thin films were obtained by using Ce(NO/sub 3/)/sub 3//spl middot/6H/sub 2/O and colloidal CeO/sub 2/ based precursor materials. Different anions and their concentrations also influenced the structure of thin films.