GaN-based Double Gate MOSFETs: Effect of gate length

The performance of GaN-based Double Gate (DG) MOSFETs have been explored with different gate lengths, L
G
for future high performance switching device applications. Devices have been designed according to the international technology roadmap for semiconductor (ITRS) - 2013. The ON-state currents are found to be 11.38 mA/µm and 9.67 mA/µm for L
G
= 11.6 nm (year 2019) and L
G
=8 nm (year 2023), respectively. These values are higher than that of conventional Si-based DG-MOSFETs. Simulation results show that the proposed GaN-based DG MOSFETs provide lesser values of subthreshold slope (SS) and drain induced barrier lowering (DIBL). These results indicate that proposed devices are plausible candidate for fabricating of future high-speed, high performance (HP) logic devices.