Next Generation IGBT and Package Technologies for High Voltage Applications

In this paper, we will present an overview of the latest results covering both Insulated Gate Bipolar Transistor (IGBT) and packaging technologies intended for demanding high-power applications. We will present the recently developed press pack module rated at 4500 V and 3000 A utilizing an advanced reverse conducting RC-IGBT for hard switching application, which together with the improved module layout yields the most powerful IGBT-based device up to date. For applications that require isolated modules, we will show our new dual IGBT module rated up to 3.3 kV and 450 A. The module layout was optimized to allow highly scalable converter designs with overall low stray inductances. This opens up new possibilities to further reduce losses due to the fact that the devices can be made thinner than today's limits for achieving lower switching losses with soft performance. We will show the latest results from the enhanced trench IGBT-cell development and give an outlook for the power levels that can be achieved by combining the new cell with the RC-IGBT concept.