A physically based circuit model to account for variability in memristors with resistive switching operation

One of the main problems in the simulation of systems based on memristors is the intrinsic variability shown by these devices. In this paper we analyzed this variability in resistive switching based memristors by using the charge-flux relations instead of the traditional current-voltage approach. We have used simulated and experimental data to develop a model that can be easily included in circuit simulators. Physical numerical simulations of devices with different conductive filament sizes were employed to fit a 3-parameter model introduced. Later on the relations between the model parameters and the conductive filament geometrical and electrical features were characterized in-depth, using an experimentally measured set of 3000 reset cycles. The obtained relations were then used to generate a new ensemble of parameters that shows similar statistical properties to the experimental one, thus enabling the modeling of the device variability.