Silicon substrate performance on morphological and electrical properties on Zinc Oxide thin films prepared via sol gel method

Among many methods to synthesize Zinc Oxide (ZnO) thin films, the most commonly used method is sol gel technique. In this study, we have used sol gel approach deposited on silicon substrate. To investigate the structural and electrical properties of ZnO thin films, silicon substrates were coated at 1, 3, 5 and 7 layers of ZnO thin film. For characterization purposes, SEM and Current-Voltage measurements were observed and recorded to optimize the morphological and electrical aspects of the ZnO respectively. From the results recorded, it is justified that the more grain particles present on the substrate the higher the current conducted. However, an excessive amount of grain particles can cause crowding effect and thus, alter the electrical and surface characteristics of the sample.