Predictive As-grown-Generation (A-G) model for BTI-induced device/circuit level variations in nanoscale technology nodes

A new model for assessing NBTI and PBTI induced time-dependent variability under practical operation workloads is proposed. The model is based on a realistic understanding of different types of defects and has excellent predictive capability, as validated by comparison with experimental data. In addition, a new fast wafer-level test scheme for parameter extraction is developed, reducing test time to 1 hour/device and significantly improving the efficiency for variability tests of nanoscale devices. The model is implemented into a commercial simulator and its applicability for circuit level simulation is demonstrated.