General relationship for cation and anion doping effects on ferroelectric HfO2 formation

This work discusses the general relationship for cation and anion doping effects on the HfO
2
para-/ferroelectric transition, which will provide us a helpful instruction for precise HfO
2
ferroelectricity design. In addition, ferroelectric N-doped HfO
2
has been demonstrated as a gate dielectric film on an oxide semiconductor for ferroelectric field-effect transistors (FeFETs).