Footprint-efficient and power-saving monolithic IoT 3D+ IC constructed by BEOL-compatible sub-10nm high aspect ratio (AR>7) single-grained Si FinFETs with record high Ion of 0.38 mA/μm and steep-swing of 65 mV/dec. and Ion/Ioff ratio of 8

A footprint-efficient and power-saving BEOL compatible 3D
⁺
IC carrying monolithic 3D stackable FinFETs (3D
⁺
FinFETs) and W interconnect were demonstrated by low thermal budget laser spike anneal technology (Tsub<400
^o
C) and body-nano-planarizing processes. The narrow single-grained Si fin structure with ultra-low defect surface were fabricated by anisotropic ICP plasma etching and surface modification processes. The thus fabricated sub-10 nm and high aspect ratio (HFin/WFin>7) 3D+ FinFETs exhibit steep subthreshold swing (S.S.∼65mV/dec.), record high driving current (I on per W
Eff
(W
Eff
=2H
Fin
+W
Fin
): 386 μA/μm (n-type) and 352μA/μm (p-type)), and high I
on
/I
off
(>10
⁷
), envisioning next generation low-cost heterogeneously integrated IoTs and wearable electronics.