Comparative study of optoelectronics receiver front-end implementation in InP, SiGe, and CMOS

A comparison between typical optoelectronic receiver front-end implemented using CMOS, SiGe BiCMOS, and InP technologies in terms of sensitivity and power consumption is presented. We discuss important design trade-offs in these technologies including monolithic versus hybrid integration of the photodetector with the TIA on-chip.