Impact of Ti Content on Structural and Electrical Characteristics of High- $\kappa$ Yb2TiO5 $\alpha$ -InZnSnO Thin-Film Transistors

In this letter, we investigated the impact of Ti content on structural properties and electrical characteristics of high-κ Yb
₂
TiO
₅
gate dielectrics for amorphous indium-zinc-tin-oxide (α-IZTO) thin-film transistor (TFT) devices. The Yb
₂
TiO
₅
α-IZTO TFT device treated at the 120 W condition exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.14 V, high field-effect mobility of 29.8 cm
²
/Vs, high I
_on
/I
_off
current ratio of 2.7 ×10
⁸
, and small subthreshold swing of 202 mV/decade.