High power pattern reconfigurable phased antenna array based on a GaN HEMT

A phased array antenna designed to achieve half power beam-width (HPBW) reconfiguration for high power microwaves (HPM) applications is presented. The radiation pattern is actuated according to a current phase distribution calculated using an infinitesimal dipole model (IDM) algorithm. A low profile antenna has been designed to be compatible with a small dipole model. This article particularly details the power amplifier which is designed to generate the high power signals. It is based on a GaN high electron mobility transistor (HEMT) to theoretically deliver up to 50W of power. The developed layout as well as the simulated and the measured performances are finally presented.