TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 \,\, \times \,\, 10^{-{9}}~\Omega $ cm2 Contact Resistivities to p-SiGe

This paper reports ultralow contact resistivities (ρ
_c
) achieved on highly doped p-SiGe with two low-temperature contact formation methods. One method combines precontact amorphization implantation with ~500 °C rapid thermal processing (RTP)-based Ti germano-silicidation; ρ
_c
achieved was ~2.9 × 10
^-9
Ω·cm
²
. The other method combines codeposited TiSi-Ti:Si = 1:1-with ~450 °C RTP-based Ti silicidation; ρ
_c
achieved was ~1.7 × 10
^-9
Ω·cm
²
. When Pc reaches minimum, the TiSi(Ge) alloy is generally amorphous with embedded small crystallites, similar to the previous observations on pure Si substrates.