Hybrid optoelectronics based on a nanocrystal/III-N nano-LED platform

We fabricated and tested hybrid-III-nitride (CdSe nanocrystal/p-GaN/MQW/n-GaN/sapphire) based nano-LEDs and integrated them into a device layout suitable for DC testing and designed for future operation at high frequencies. Our studies provide clear evidence that our technological process for the vertically integrated nano-LED emitters is perfectly suited for long-term operation without any indication of degradation effects. This novel technology shows strong potential for a future single photon based OE circuit.