The reaction mechanism of cupric oxide reduction under hydrogen plasma treatment for epoxy molding compound / lead-frames adhesion improve

Cupric oxide reduction mechanism under H
₂
/Ar plasma treatment and its effect on EMC/LF adhesion characterization was studied in this paper. The relationship of the adhesion force between EMC/LF and different baking conditions was measured, and the LF surface composition like as cupric oxide and cuprous oxide was analyzed by AES depth profile analysis, too. The result show that the thickness of cupric oxide was dominated by baking time and the cupric oxide ratio will decrease and cuprous oxide ratio increase after plasma reaction. The chemical mechanism is cupric oxide reduction and following cuprous oxide oxidation to obtain surface activities on LF Cu, and then form H-bonding to strengthen bonding force between the EMC/LF interfaces. This mechanism can provide the best adhesion contribution of EMC/LF.