ZnO Growth Properties in ZnO/SnS Heterojunction by a Combination of ECD and CBD Method

Zinc oxide thin films were deposited on tin monosulfide thin films from aqueous solution of N
₂
O
₆
Zn.
₆
H
₂
O and C
₆
H
₁₂
N
₄
by chemical bath deposition (CBD) method and produce ZnO/SnS heterojunction. Before that, SnS was deposited on indium-tin-oxide (ITO) coated glass substrate by electrochemical deposition (ECD) method. Hence, the ZnO growth properties were investigated from surface morphology, X-ray diffractometer (XRD) spectra, thickness, chemical composition and current density-voltage (J-V) measurement. The ZnO samples were deposited using three various deposition times, which are 10 hours, 20 hours and 30 hours at solution temperature of 90 °C. Then, the growth properties were investigated using field emission scanning electron microscope (FESEM), XRD, current-voltage (I-V) two point probes, energy dispersive X-ray Spectroscopy (EDX) and surface profiler. The thickness of ZnO/SnS heterojunction was 1.25-2.00 μm and the diameter of ZnO nanorods were 1.11-2.92 μm. All of ZnO peaks observed from XRD corresponding to the wurzite structure and all of SnS peak corresponding to orthorhombic structure. In addition, deposition time affects the J-V characteristic and J-V curve shows ZnO/SnS heterojunction with Schottky diode properties.