Effects of fin width on performance and reliability for N- and P-type FinFETs

In this work, the effect of fin width on device performance and reliability for high-k/metal tri-gate n/p-type FinFETs was investigated including electrical characteristic clarification and simulation. Carrier conduction in the trapezoidal shape Si-fin body of FinFETs is different for devices with different fin bottom widths (W
_Fin
_
_bottom
), which will affect device properties. For n-type FinFETs, the experimental results show that thinner W
_{Fin_bottom}
device performs better reliability under HCI stress due to higher inversion carrier density at the center of Si-fin channel. For p-type FinFETs under negative bias stressing, thinner W
_{Fin_bottom}
device shows more serious degradation with the increasing of stressing voltage due to larger electric field within the Si-fin and higher energy of inversion holes, while the thicker W
_{Fin_bottom}
device shows almost insensitively degradation with the variation of stressing voltage.