Bipolar resistive switching in Al/GO-PEDOT:PSS/Pt memory devices

We propose graphene oxide (GO) poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) as new resistive memory material for non-volatile bipolar resistive switching memories, GO-PEDOT:PSS composites show great potential for resistance-change use in high density flexible nonvolatile memories. Repetitive high-speed switching, low switching voltage (about ±1-3V), tight distributions of HRS and LRS and long retention of more than 10
⁴
s have been successfully demonstrated. The mechanism of conduction and resistance switching are studied.