Quantum ballistic transport in ultra-small silicon channel cylindrical gate-all-around junction less nanowire transistor using NEGF formalism

This work investigates quantum ballistic transport in ultra-small junctionless semiconducting nanowire transistors, within the framework of self-consistent Schrodinger-Poisson problem. A sub-band decomposition approach has been taken to make the problem numerically tractable. Finally simulated transport characteristics for small diameter (d≤5 nm) n-Si-channel cylindrical gate-all-around junctionless nanowire transistor are discussed. The DIBL and SS of this novel device is compared with cylindrical gate-all-around nanowire MOSFET and rectangular gate-all-around junctionless nanowire transistor data. The results show a much better prospect of scaling down with cylindrical gate junctionless nanowire transistor, which may be advantageous for use in integrated circuit industry.