Effect of Si-delta doping and barrier lengths on the performance of triple barrier GaAs/AlGaAs resonant tunneling diode

In this article, we analyse the effect of Si-delta doping and barrier legth variation on the performance of triple barrier resonant tunneling diode (TBRTD). Firstly, we propose a model of triple barrier RTD and characterize its properties then insert a delta layer in the middle of the well within geometry of the device. Furthermore, Compare the characteristics of δ-doped structure and normal structure to get the improvization in the device performance. This improvement is used in many applications of memories implementation as well as Negative differential region based applications i.e. Oscillators and rectifiers. Simulation of the device has been performed with the use of Nextnano3 tool which confirms the various results presented in this research.