Statistics on Applied Voltages in Schottky Barrier Diodes at Same Forward Current in a Fabrication Process

A batch of Al/n-Si Schottky barrier diodes (SBDs) have been manufactured in the same fabrication process and the forward bias current-voltage (I-V) characteristics of SBDs in the same fabrication process are measured at 300 K. After the forward-bias I-V characteristics of 1300 SBSs are measured, the statistics histogram on the applied voltages in 1300 SBDs are presented at forward bias currents of 1, 10, 50, and 150 mA, respectively. The applied voltage fluctuations of SBDs at the same forward bias current are given. The positive skewed distribution of the applied voltages at forward currents of 10, 50, and 150 mA are found, respectively, whereas the normal distribution of applied voltage at a forward bias current of 1 mA is given. It is also shown that not only the range of applied voltage is enlarged but also the difference between the average voltage and the median applied voltage increased with the forward bias current. This may be due to the variation of series resistance in SBDs at high forward bias current levels.